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Stochastic model and simulation of growth and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy
Sabelfeld, K.K., Kablukova, E.G.Volume:
141
Language:
english
Journal:
Computational Materials Science
DOI:
10.1016/j.commatsci.2017.09.046
Date:
January, 2018
File:
PDF, 4.27 MB
english, 2018