High power X-band (8.4 GHz) SiGe/Si heterojunction bipolar transistor
Ma, Z., Mohammadi, S., Bhattacharya, P., Katehi, L.P.B., Alterovitz, S.A., Ponchak, G.E.Volume:
37
Year:
2001
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20010514
File:
PDF, 260 KB
english, 2001