Quaternary InAlGaN barrier high-electron-mobility...

Applied Physics Express 2017 / 11 Vol. 10; Iss. 11

Quaternary InAlGaN barrier high-electron-mobility transistors with f max > 400 GHz

Zhu, Guangrun, Zhang, Kai, Kong, Yuechan, Li, Chuanhao, Lu, Haiyan, Yu, Xinxin, Li, Zhonghui, Chen, Tangsheng
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Volume:
10
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.10.114101
Date:
November, 2017
File:
PDF, 1.35 MB
english, 2017
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