A Promising Approach for High Performance of MoS2...

ACS Applied Materials & Interfaces 2017 / 10

A Promising Approach for High Performance of MoS2 Nanodevice: Doping the BN Buffer Layer to Eliminate the Schottky Barriers

Su, Jie, Feng, Li-ping, Zheng, Xiaoqi, Hu, Chenlu, Lu, Hongcheng, Liu, Zhengtang
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Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.7b10967
Date:
October, 2017
File:
PDF, 1.87 MB
english, 2017
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