Deep level defects in 4H-SiC introduced by ion implantation: The role of single ion regime
Pastuovic, Zeljko, Capan, Ivana, Sato, Shin-ichiro, Ohshima, Takeshi, Brodar, Tomislav, Siegele, RainerLanguage:
english
Journal:
Journal of Physics: Condensed Matter
DOI:
10.1088/1361-648X/aa908c
Date:
October, 2017
File:
PDF, 575 KB
english, 2017