Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2017 / 11 Vol. 35; Iss. 6
Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template
Kryvyi, Serhii B., Lytvyn, Petro M., Kladko, Vasyl P., Stanchu, Hryhorii V., Kuchuk, Andrian V., Mazur, Yuriy. I., Salamo, Gregory J., Li, Shibin, Kogutyuk, Pavlo P., Belyaev, Alexander E.Volume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4999468
Date:
November, 2017
File:
PDF, 1.78 MB
english, 2017