Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment
Yuan, Fang-Yuan, Deng, Ning, Shih, Chih-Cheng, Tseng, Yi-Ting, Chang, Ting-Chang, Chang, Kuan-Chang, Wang, Ming-Hui, Chen, Wen-Chung, Zheng, Hao-Xuan, Wu, Huaqiang, Qian, He, Sze, Simon M.Volume:
12
Language:
english
Journal:
Nanoscale Research Letters
DOI:
10.1186/s11671-017-2330-3
Date:
December, 2017
File:
PDF, 3.33 MB
english, 2017