Breakdown mechanism in AlGaN/GaN high-electron mobility...

Japanese Journal of Applied Physics 2016 / 05 Vol. 55; Iss. 5S

Breakdown mechanism in AlGaN/GaN high-electron mobility transistor structure on free-standing n-type GaN substrate

Tanabe, Shinichi, Watanabe, Noriyuki, Matsuzaki, Hideaki
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.05FK01
Date:
May, 2016
File:
PDF, 698 KB
english, 2016
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