Geometrical effects in JTE Rings Termination for 4H-SiC...

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Semiconductor Science and Technology 2017 / 10

Geometrical effects in JTE Rings Termination for 4H-SiC Medium-Voltage Devices

Yuan, Lei, Song, Qingwen, Tang, Xiaoyan, Zhang, Yimeng, Guo, Lixin, Zhang, Yimen, Zhang, Yuming
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aa972a
Date:
October, 2017
File:
PDF, 848 KB
english, 2017
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