Deleterious electrostatic interaction in silicon passivation stack between thin ALD Al 2 O 3 and its a-SiN X :H capping layer: numerical and experimental evidences
Lebreton, Fabien, Lachaume, Raphaël, Bulkin, Pavel, Silva, François, Filonovich, Sergej A., Johnson, Erik V., Cabarrocas, Pere Roca iVolume:
124
Language:
english
Journal:
Energy Procedia
DOI:
10.1016/j.egypro.2017.09.328
Date:
September, 2017
File:
PDF, 1.38 MB
english, 2017