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Contact resistivity reduction on lowly-doped n-type Si using a low workfunction metal and a thin TiO X interfacial layer for doping-free Si solar cells
Cho, Jinyoun, Debucquoy, Maarten, Recaman Payo, Maria, Malik, Shuja, Filipič, Miha, Radhakrishnan, Hariharsudan Sivaramakrishnan, Bearda, Twan, Gordon, Ivan, Szlufcik, Jozef, Poortmans, JefVolume:
124
Language:
english
Journal:
Energy Procedia
DOI:
10.1016/j.egypro.2017.09.356
Date:
September, 2017
File:
PDF, 1.33 MB
english, 2017