Effect of strained Ge-based NMOSFETs with Ge 0.93 Si 0.07...

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Solid-State Electronics 2017 / 10

Effect of strained Ge-based NMOSFETs with Ge 0.93 Si 0.07 stressors on device layout

Hsu, Hung-Wen, Lee, Chang-Chun
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Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2017.10.007
Date:
October, 2017
File:
PDF, 859 KB
english, 2017
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