1.75 µm strained InGaAs multiquantum well laser grown on...

Electronics Letters 1995 / 02 Vol. 31; Iss. 3

1.75 µm strained InGaAs multiquantum well laser grown on InAs0.08P0.92 ternary substrate

Olsen, G.H., Garbuzov, D., Bonner, W.A., Paff, R., Menna, R.J., Vermaak, J.S., Martinelli, R.U.
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Volume:
31
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19950105
Date:
February, 1995
File:
PDF, 231 KB
english, 1995
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