0.1 [micro sign]m (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
Zaknoune, M., Schuler, O., Mollot, F., Théron, D., Crosnier, Y.Volume:
35
Year:
1999
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19991196
File:
PDF, 363 KB
english, 1999