4H-SiC Trench MOSFET With Floating/Grounded Junction...

IEEE Transactions on Electron Devices 2017 / 11 Vol. 64; Iss. 11

4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

Zhou, Xintian, Yue, Ruifeng, Zhang, Jian, Dai, Gang, Li, Juntao, Wang, Yan
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2755721
Date:
November, 2017
File:
PDF, 3.55 MB
english, 2017
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