Physical-Based Analytical Model of Amorphous InGaZnO TFTs...

IEEE Transactions on Electron Devices 2017 / 11 Vol. 64; Iss. 11

Physical-Based Analytical Model of Amorphous InGaZnO TFTs Including Deep, Tail, and Free States

Ghittorelli, Matteo, Kovacs-Vajna, Zsolt Miklos, Torricelli, Fabrizio
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2017.2755098
Date:
November, 2017
File:
PDF, 2.92 MB
english, 2017
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