Variation of I–V characteristics due to process parameters as base for modeling the component variability for LDD MOSFET devices
Marani, Roberto, Perri, Anna GinaLanguage:
english
Journal:
International Journal of Modeling, Simulation, and Scientific Computing
DOI:
10.1142/S1793962318500150
Date:
October, 2017
File:
PDF, 236 KB
english, 2017