Scaling of graphene field-effect transistors supported on...

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor

Feijoo, Pedro C, Pasadas, Francisco, Iglesias, José M, Martín, María J, Rengel, Raúl, Li, Changfeng, Kim, Wonjae, Riikonen, Juha, Lipsanen, Harri, Jiménez, David
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Volume:
28
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/1361-6528/aa9094
Date:
December, 2017
File:
PDF, 2.14 MB
english, 2017
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