[IEEE 2017 Devices for Integrated Circuit (DevIC) - Kalyani, India (2017.3.23-2017.3.24)] 2017 Devices for Integrated Circuit (DevIC) - Improvement of transconductance and gate source capacitance of Al0.27Ga0.73N/GaN HEMT at 45nm gate length with In0.1Ga0.9N back-barrier

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