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The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation; 经氮氟复合注入的绝缘体上硅材料埋氧层的总剂量辐射响应;
Zheng, Zhongshan, Ning, Jin, Zhang, Baiqiang, Liu, Zhongli, Luo, Jiajun, Han, ZhengshengVolume:
59
Language:
english
Journal:
Science China Materials
DOI:
10.1007/s40843-016-5075-y
Date:
August, 2016
File:
PDF, 2.23 MB
english, 2016