Influence of oxygen vacancies in ALD HfO 2-x thin films on...

Applied Surface Science 2018 / 03 Vol. 434

Influence of oxygen vacancies in ALD HfO 2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO 2-x /Pt structure

Sokolov, Andrey Sergeevich, Jeon, Yu-Rim, Kim, Sohyeon, Ku, Boncheol, Lim, Donghwan, Han, Hoonhee, Chae, Myeong Gyoon, Lee, Jaeho, Ha, Beom Gil, Choi, Changhwan
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Volume:
434
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2017.11.016
Date:
March, 2018
File:
PDF, 4.04 MB
english, 2018
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