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Microelectronic Engineering 2017 / 11

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

Tikhov, S.V., Mikhaylov, A.N., Belov, A.I., Korolev, D.S., Antonov, I.N., Karzanov, V.V., Gorshkov, O.N., Tetelbaum, D.I., Karakolis, P., Dimitrakis, P.
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Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2017.11.002
Date:
November, 2017
File:
PDF, 916 KB
english, 2017
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