B-doped diamond field-effect transistor with ferroelectric...

Japanese Journal of Applied Physics 2017 / 10 Vol. 56; Iss. 10S

B-doped diamond field-effect transistor with ferroelectric vinylidene fluoride–trifluoroethylene gate insulator

Karaya, Ryota, Baba, Ikki, Mori, Yosuke, Matsumoto, Tsubasa, Nakajima, Takashi, Tokuda, Norio, Kawae, Takeshi
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.10PF06
Date:
October, 2017
File:
PDF, 2.43 MB
english, 2017
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