Electrical characterizations of MIS structures based on variable-gap n(p )-HgCdTe grown by MBE on Si(0 1 3) substrates
Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretskii, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Yu.Volume:
87
Language:
english
Journal:
Infrared Physics & Technology
DOI:
10.1016/j.infrared.2017.10.006
Date:
December, 2017
File:
PDF, 1.27 MB
english, 2017