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Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects
Ike, Shinichi, Simoen, Eddy, Shimura, Yosuke, Hikavyy, Andriy, Vandervorst, Wilfried, Loo, Roger, Takeuchi, Wakana, Nakatsuka, Osamu, Zaima, ShigeakiVolume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.04EJ11
Date:
April, 2016
File:
PDF, 1.58 MB
english, 2016