Oxygen- and photoresist-related interface states of 4H-SiC...

Journal of Applied Physics 2017 / 09 Vol. 122; Iss. 9

Oxygen- and photoresist-related interface states of 4H-SiC Schottky diode observed by deep-level transient spectroscopy

Kang, Hong Jeon, Moon, Jeong Hyun, Bahng, Wook, Lee, Suhyeong, Kim, Hyunwoo, Koo, Sang-Mo, Lee, Dohyun, Lee, Dongwha, Cho, Hoon-Young, Heo, Jaeyeong, Kim, Hyeong Joon
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Volume:
122
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4989912
Date:
September, 2017
File:
PDF, 1.50 MB
english, 2017
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