Properties of InGaN/GaN MQW LEDs grown by MOCVD with and...

Vacuum 2018 / 02 Vol. 148

Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas

Ekinci, Huseyin, Kuryatkov, Vladimir V., Forgey, Chris, Dabiran, Amir, Jorgenson, Robert, Nikishin, Sergey A.
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Volume:
148
Language:
english
Journal:
Vacuum
DOI:
10.1016/j.vacuum.2017.11.014
Date:
February, 2018
File:
PDF, 1.76 MB
english, 2018
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