Erratum: “High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment” [Appl. Phys. Lett. 100 , 202106 (2012)]
Nayak, Pradipta K., Hedhili, M. N., Cha, Dongkyu, Alshareef, H. N.Volume:
105
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4902402
Date:
December, 2014
File:
PDF, 218 KB
english, 2014