Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2017 / 09 Vol. 35; Iss. 5
Near-infrared laser annealing of Ge layers epitaxially grown on Si for high-performance photonic devices
Nagatomo, Sho, Ishikawa, Yasuhiko, Hoshino, SatohikoVolume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4995321
Date:
September, 2017
File:
PDF, 2.56 MB
english, 2017