Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching
Matsumoto, Koji, Ono, Toshiaki, Honda, Yoshio, Yamamoto, Tetsuya, Usami, Shigeyoshi, Kushimoto, Maki, Murakami, Satoshi, Amano, HiroshiLanguage:
english
Journal:
physica status solidi (b)
DOI:
10.1002/pssb.201700387
Date:
November, 2017
File:
PDF, 1.60 MB
english, 2017