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Epitaxy of Si 1− x C x via ultrahigh-vacuum chemical vapor deposition using Si 2 H 6 , Si 3 H 8 , or Si 4 H 10 as Si precursors
Koo, Sangmo, Jang, Hyunchul, Ko, Dae-HongVolume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.095502
Date:
September, 2017
File:
PDF, 899 KB
english, 2017