Structural defects of GaN deposited on (111) Si with Gd...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2017 / 11 Vol. 35; Iss. 6

Structural defects of GaN deposited on (111) Si with Gd 2 O 3 -related buffer layers

Lo, Ko-Ying, Lin, Pei-Hsin, Chen, Hung-Jung, Gong, Jyh-Rong, Hsu, Hsun-Feng, Lee, Yu-Wei, Chen, Wei-Li
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Volume:
35
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.5000986
Date:
November, 2017
File:
PDF, 855 KB
english, 2017
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