Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure
Hou, Zhaozhao, Zhang, Qingzhu, Yin, Huaxiang, Xiang, Jinjuan, Qin, Changliang, Yao, Jiaxin, Gu, JieVolume:
6
Year:
2017
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0251710jss
File:
PDF, 1.18 MB
english, 2017