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Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer
Kim, Dong-Hwan, Jeong, Jun-Seok, Eom, Su-Keun, Lee, Jae-Gil, Seo, Kwang-Seok, Cha, Ho-YoungVolume:
71
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.71.697
Date:
November, 2017
File:
PDF, 1.14 MB
english, 2017