Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process
Hong, Seonghwan, Park, Sung Pyo, Kim, Yeong-gyu, Kang, Byung Ha, Na, Jae Won, Kim, Hyun JaeVolume:
7
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/s41598-017-16585-x
Date:
December, 2017
File:
PDF, 4.47 MB
english, 2017