In 0.53 Ga 0.47...

IEEE Transactions on Electron Devices 2017 / 11 Vol. 64; Iss. 11

In 0.53 Ga 0.47 As/InP Trench-Gate Power MOSFET Based on Impact Ionization for Improved Performance: Design and Analysis

Saini, Navneet Kaur, Sahay, Shubham, Saxena, Raghvendra Sahai, Kumar, Mamidala Jagadesh
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2754404
Date:
November, 2017
File:
PDF, 2.61 MB
english, 2017
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