[IEEE 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Warsaw, Poland (2017.9.11-2017.9.14)] 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - An investigation of the IGBT gate driving conditions employing an equivalent circuit model of power semiconductor device
Uemura, Hirofumi, Yoshida, Daichi, Matsumoto, Hiroyuki, Fujimoto, Hisashi, Okuma, YasuhiroYear:
2017
Language:
english
DOI:
10.23919/EPE17ECCEEurope.2017.8099165
File:
PDF, 319 KB
english, 2017