Plasma assisted molecular beam epitaxy of thin GaN films on...

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Thin Solid Films 2017 / 11

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effect of SiC and polarity issues

Kukushkin, S.A., Mizerov, A.M., Osipov, A.V., Redkov, A.V., Timoshnev, S.N.
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Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2017.11.037
Date:
November, 2017
File:
PDF, 1.17 MB
english, 2017
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