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InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
Piotrowicz, Stéphane, Jacquet, Jean-Claude, Gamarra, Piero, Patard, Olivier, Dua, Christian, Chartier, Eric, Michel, Nicolas, Oualli, Mourad, Lacam, Cedric, Potier, Clément, Altuntas, Philippe, DelageLanguage:
english
Journal:
International Journal of Microwave and Wireless Technologies
DOI:
10.1017/S175907871700112X
Date:
November, 2017
File:
PDF, 734 KB
english, 2017