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Interface engineering of ALD HfO 2 -based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
Ku, Boncheol, Abbas, Yawar, Sokolov, Andrey Sergeevich, Choi, ChanghwanVolume:
735
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2017.11.267
Date:
February, 2018
File:
PDF, 2.84 MB
english, 2018