A review of the Z 2 -FET 1T-DRAM memory: Operation...

Solid-State Electronics 2017 / 12

A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters

Cristoloveanu, S., Lee, K.H., Parihar, M.S., El Dirani, H., Lacord, J., Martinie, S., Le Royer, C., Barbe, J.-Ch., Mescot, X., Fonteneau, P., Galy, Ph., Gamiz, F., Navarro, C., Cheng, B., Duan, M., Ad
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Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2017.11.012
Date:
December, 2017
File:
PDF, 1.45 MB
english, 2017
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