Degradation in AlGaN/GaN heterojunction field effect...

Applied Physics Letters 2013 / 10 Vol. 103; Iss. 16

Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

Zhu, C. Y., Zhang, F., Ferreyra, R. A., Avrutin, V., Özgür, Ü., Morkoç, H.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
103
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4826324
Date:
October, 2013
File:
PDF, 1.00 MB
english, 2013
Conversion to is in progress
Conversion to is failed