Controlling the ambipolarity and improvement of RF...

International Journal of Electronics 2017 / 11

Controlling the ambipolarity and improvement of RF performance using Gaussian Drain Doped TFET

Nigam, Kaushal, Gupta, Sarthak, Pandey, Sunil, Kondekar, P N, Sharma, Dheeraj
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Language:
english
Journal:
International Journal of Electronics
DOI:
10.1080/00207217.2017.1409807
Date:
November, 2017
File:
PDF, 1.97 MB
english, 2017
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