Bias temperature instabilities in 4H SiC metal oxide...

Microelectronics Reliability 2018 / 02 Vol. 81

Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance

Lenahan, P.M., Anders, M.A., Waskiewicz, R.J., Lelis, A.J.
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Volume:
81
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2017.12.010
Date:
February, 2018
File:
PDF, 577 KB
english, 2018
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