(Invited) ScAlN: A Novel Barrier Material for High Power GaN-Based RF Transistors
Hardy, Matthew T., Downey, Brian P., Nepal, Neeraj, Storm, David F., Katzer, D. Scott, Meyer, David J.Volume:
80
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/08007.0161ecst
Date:
August, 2017
File:
PDF, 1.51 MB
english, 2017