Formation Mechanism of Atomically Flat Si(100) Surface by...

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Journal of Electronic Materials 2017 / 12

Formation Mechanism of Atomically Flat Si(100) Surface by Annealing in Ar/H2 Ambient

Kudoh, Sohya, Ohmi, Shun-ichiro
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Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-017-5975-x
Date:
December, 2017
File:
PDF, 1.51 MB
english, 2017
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