Highly flexible resistive switching memory based on the...

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ACS Applied Materials & Interfaces 2017 / 12

Highly flexible resistive switching memory based on the electronic switching mechanism in the Al/TiO2/Al/polyimide structure

Zhao, Jinshi, Zhang, Ming, Wan, Shangfei, Yang, Zheng-Chun, Hwang, Cheol Seong
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Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.7b16214
Date:
December, 2017
File:
PDF, 1.80 MB
english, 2017
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