Improved understanding of the recombination rate at...

Japanese Journal of Applied Physics 2017 / 08 Vol. 56; Iss. 8S2

Improved understanding of the recombination rate at inverted p + silicon surfaces

To, Alexander, Ma, Fajun, Hoex, Bram
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.08MB05
Date:
August, 2017
File:
PDF, 855 KB
english, 2017
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