Improvement of Channel Mobility of GaN-MOSFETs With Thermal...

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physica status solidi (a) 2017 / 12

Improvement of Channel Mobility of GaN-MOSFETs With Thermal Treatment for Recess Surface

Uesugi, Kenjiro, Shindome, Aya, Kajiwara, Yosuke, Yonehara, Toshiya, Kato, Daimotsu, Hikosaka, Toshiki, Kuraguchi, Masahiko, Nunoue, Shinya
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Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201700511
Date:
December, 2017
File:
PDF, 1.84 MB
english, 2017
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