Isovalent doping and the CiOi defect in germanium

Journal of Materials Science: Materials in Electronics 2017 / 12

Isovalent doping and the CiOi defect in germanium

Christopoulos, S.-R. G., Sgourou, E. N., Vovk, R. V., Chroneos, A., Londos, C. A.
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Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-017-8372-6
Date:
December, 2017
File:
PDF, 1.27 MB
english, 2017
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